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Description of  Electronic Structure of Semiconductor Interfaces (Synthesis Lectures on Engineering, Science, and Technology)

3031590635 pdf 3031590635 pdf This concise volume examines the characteristic electronic parameters of semiconductor interfaces, namely the barrier heights of metalsemiconductor or Schottky contacts and the valence-band discontinuities of semiconductorsemiconductor interfaces or heterostructures. Both are determined by the same concept, namely the wave-function tails of electron states overlapping a semiconductor band gap directly at the interface. These interface-induced gap states (IFIGS) result from the complex band structure of the corresponding semiconductor. The IFIGS are characterized by two parameters, namely by their branch point, at which their charge character changes from predominantly valence-band- to conduction-band-like, and secondly by the proportionality factor or slope parameter of the corresponding electric-dipole term, which varies in proportion to the difference in the electronegativities of the two solids forming the interface. This IFIGS-and-electronegativity concept consistently and quantitatively explains the experimentally observed barrier heights of Read more