Parameter Extraction and Complex Nonlinear Transistor Models free ebook download.

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Parameter Extraction and Complex Nonlinear Transistor Models free ebook download

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Electrical Engineering

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Author(s):	Parameter Extraction and Complex Nonlinear Transistor Models

Date:	2020	Format:	PDF	Language:	English	ISBN/ASIN:	1630817449
Pages:	1	OCR:		Quality:		ISBN13:
Uploader:	risotor	Upload Date:	8/27/2020 11:21:33 PM

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This comprehensive resource presents all aspects concerning the modeling of semiconductor field-effect device parameters based on gallium-arsenide (GaAs) and generative adversarial network (GaN) technology. Metal-semiconductor field-effect transistors (MESFETs), high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs), their structures and functions, and existing transistor models are also classified. The Shockley model is presented in order to give insight into semiconductor field-effect transistor (FET) device physics and explain the relationship between geometric and material parameters and device performance. Extraction of trapping and thermal time constants is discussed. A special section is devoted to standard nonlinear FET models applied to large-signal measurements, including static-/pulsed-DC and single-/two-tone stimulation. High power measurement setups for signal waveform measurement, wideband source-/load-pull measurement (including envelope source-/load pull) are also included, along with high-power intermodulation distortion (IMD) measurement setup (including envelope load-pull). Written by a world-renowned expert in the field, this book is the first to cover of all aspects of semiconductor FET device modeling in a single volume.

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	Title	Link	Password	Size (MB)	Thank to	Inform Admin
2853424	Book	https://florenfile.com/h1n232sqmo0t...		45.00	risotor

Tags: Complex Extraction Models Nonlinear Parameter Transistor

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